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Properties of DX Centers in AlxGa1−xAs and Effects on Heterojunction Devices
Published online by Cambridge University Press: 16 February 2011
Abstract
In this paper the effects of DX levels on the properties of AlxGa1−xAs and certain heterojunction device structures are summarized. Studies of alloy effects, variations of the local atomic environment near the donor, are reviewed and microscopic models of the DX center are discussed in terms of these and other recent experimental results.
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- Research Article
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- Copyright © Materials Research Society 1990
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