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Properties of Modulation-Doped HgCdTe Superlattices
Published online by Cambridge University Press: 21 February 2011
Abstract
Photoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.
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- Copyright © Materials Research Society 1990
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