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Prospects for the Mott Transition Field Effect Transistor

Published online by Cambridge University Press:  21 March 2011

J.A. Misewich  and
A.G. Schrott
J.A. Misewich
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
A.G. Schrott
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

We have been investigating the potential for a channel transistor which utilizes a perovskite oxide capable of undergoing the Mott metal-insulator transition as the channel material. Our experiments have identified three limitations to the performance of the oxide devices: contact resistance to the channel, mobility limitations due to polycrystalline channels, and inadequate field induced surface charge density. In this paper we review progress we have made in oxide electrodes and in improving channel growth conditions which have mitigated the limitations due to contact resistance and polycrystalline channels. We conclude with an outline of our approach to improving the field induced surface charge density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F4.7
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Newns, D.M., Misewich, J.A., Tsuei, C.C., Gupta, A., Scott, B.A., and Schrott, A., Appl. Phys. Lett. 73, 780 (1998).Google Scholar
2. Misewich, J.A. and Schrott, A.G., Appl. Phys. Lett. 76, 3632 (2000).Google Scholar
3. Schrott, A.G., Misewich, J.A., Copel, M., Abraham, D.W., and Neumayer, D.A., in Materials Science of Novel Oxide-Based Electronics, edited by Ginley, D.S., Newns, D.M., Laqazoe, H., Kozyrev, A.B., and Perkins, J.D. (Mat. Res. Soc. Proc. 623, Pittsburgh, PA, 2000), xxx.Google Scholar
4. Misewich, J.A. and Schrott, A.G., in Materials Science of Novel Oxide-Based Electronics, edited by Ginley, D.S., Newns, D.M., Laqazoe, H., Kozyrev, A.B., and Perkins, J.D. (Mat. Res. Soc. Proc. 623, Pittsburgh, PA, 2000), xxx.Google Scholar
5. Mott, N., “Metal-Insulator Transitions”, (Taylor and Francis, London) 1990.Google Scholar
6. Tokura, Y., Physica C 235–240, 138 (1994).Google Scholar
7. Ramakrishnan, T.V., J. Solid State Chem. 111, 4 (1994).Google Scholar
8. Schrott, A.G., Misewich, J.A., Abraham, D.W., Ramesh, R., and Valanoor, N., see article in this journal.Google Scholar
9. Arrouy, F., Loquet, J.-P., Williams, E.J., Machler, E., Berger, R., Gerber, C., Monroux, C., Grenier, J.-C., and Wattiaux, A., Phys. Rev. B 54, 7512 (1996).Google Scholar
10. Zhou, C., Newns, D.M., Misewich, J.A., and Pattnaik, P., Appl. Phys. Lett. 70, 598 (1997).Google Scholar
11. Watanabe, Y., Appl. Phys. Lett. 66, 1770 (1995).Google Scholar