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Pulsed Laser Deposition of Gallium Nitride on Sapphire
Published online by Cambridge University Press: 10 February 2011
Abstract
We have fabricated high quality single crystalline GaN films on sapphire (0001) substrates using pulsed laser deposition. Our best GaN films on sapphire (0001) featured the FWHM of the GaN (002) peak rocking curve of 7 arcmin, the RBS minimum yield of only 3%, and the energy gap width of 3.4 eV. The effect of the deposition temperature on the crystalline quality of the films is discussed.
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- Copyright © Materials Research Society 1997
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