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Pyroelectric Effect in Wurtzite Gallium Nitride
Published online by Cambridge University Press: 15 February 2011
Abstract
We report on the measurements of the pyroeffect in wurtzite n-type GaN films deposited over basal plane sapphire substrates. The voltage drop between the contacts was measured while the sample was subjected to uniform heating. Our results show that the pyroelectric effect in GaN can be partially attributed to the secondary pyroelectricity, caused by the development of strain in the material due to thermal expansion.
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- Copyright © Materials Research Society 1996
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