Hostname: page-component-7479d7b7d-fwgfc Total loading time: 0 Render date: 2024-07-12T11:29:04.658Z Has data issue: false hasContentIssue false
  • English
  • Français

Radiation Damage and its Annealing in Semiconductors

Published online by Cambridge University Press:  15 February 2011

J. Narayan  and
J. Fletcher
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Fletcher
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
Get access

Abstract

Residual damage in the form of point defect clusters and amorphous regions has been investigated in ion and neutron irradiated silicon specimens. Annealing of this damage during conventional heating, flame annealing, and pulsed laser irradiation has been studied by plan-view and cross-section electron microscopy techniques. These results provide detailed information on annealing mechanisms, and emphasize the characterization of damage in the as-irradiated state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 191
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ion Implantation of Semiconductors, Carter, G. and Grant, W. A., Arnold (1976);Google Scholar
Ion Implantation in Semiconductors, Mayer, J. W., Eriksson, L. and Davies, J. A., Academic Press (1970).Google Scholar
2. Neutron Transmutation Doping in Semiconductors, ed. by Meese, J. M., Plenum Press (1979).CrossRefGoogle Scholar
3. Narayan, J., J. Metals. 32 (6), 15 (1980);Google Scholar
White, C. W., Narayan, J., Young, R. T., Science 204, 461 (1979).Google Scholar
4. Lattice Defects in Semiconductors, The Institute of Physics, Vol. 23 (London) 1974).Google Scholar
5. Larson, B. C. and Barhorst, J. F., these proceedings;Google Scholar
Larson, B. C., Narayan, J. and Young, R. T., p. 281 in Neutron Transmutation Doping in Semiconductors, Plenum Press (1979).Google Scholar
6. Stein, H., p. 229 in Neutron Transmutation Doping in Semiconductors, Plenum Press (1979).Google Scholar
7. Tan, T. Y., these proceedings.Google Scholar
8. Frank, W., these proceedings.Google Scholar
9. Cemboli, C., Dori, L., Gallioni, R., Servidori, M. and Zignani, F., Rad. Eff. 36, 111 (1978).Google Scholar
10. Narayan, J. (unpublished data).Google Scholar
11. Csepregi, L., Mayer, J. W. and Sigmon, T. W., Appl. Phys. Lett. 29, 92 (1976).CrossRefGoogle Scholar
12. Csepregi, L., Kennedy, E. F., Gallagher, T. J., Mayer, J. W. and Sigmon, T. W., J. Appl. Phys. 48, 4234 (1977).Google Scholar
13. Picraux, S. T., these proceedings.Google Scholar
14. Narayan, J., J. Electrochem. Soc. 80–1, 294 (1980).Google Scholar
15. Narayan, J. and Young, R. T. (unpublished).Google Scholar