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Raman and Photoluminescence Characterization of FIB Patterned AIGaAs/GaAs Multiple Quantum Wells

Published online by Cambridge University Press:  22 February 2011

Ahn Goo Choo ,
Xuelong. Cao ,
Spirit Tlali ,
Howard E. Jackson ,
Peter Chen ,
Andrew J. Steckl  and
Joseph T. Boyd
Ahn Goo Choo
Affiliation:
Department of Physics, University of Cincinnati, OH 45221-0011
Xuelong. Cao
Affiliation:
Department of Physics, University of Cincinnati, OH 45221-0011
Spirit Tlali
Affiliation:
Department of Physics, University of Cincinnati, OH 45221-0011
Howard E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, OH 45221-0011
Peter Chen
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, OH 45221-0030
Andrew J. Steckl
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, OH 45221-0030
Joseph T. Boyd
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, OH 45221-0030
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Abstract

Raman and photoluminescence (PL) spectra have been used to characterize A10.3Ga0.7As/GaAs multiple quantum well (MQW) structures that have been patterned by focused ion beam (FIB) implantation followed by rapid thermal annealing (RTA). Microprobe Raman scattering is used to identify the appropriate RTA and FIB implantation conditions that provide for removal of implantation-induced damage and for compositional intermixing. FIB patterned wire-like structures are characterized by spatially resolved PL spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 193
Copyright
Copyright © Materials Research Society 1994

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References

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