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Reactions of Titanium Films with thin Silicon Dioxide, Nitride, and Oxynitride Films During Rapid Thermal Annealing
Published online by Cambridge University Press: 25 February 2011
Abstract
The interactions of Ti with SiO2, Si3N4, and SiOiNy have been studied during rapid thermal annealing at 400 to 900 °C in Ar with 3% H2 ambient. X-ray diffraction, sheet resistance measurements, RBS, nuclear reaction technique to profile hydrogen, and microscopy have been employed in this study. The results of this investigation indicate that Si3N4 and SiOxNy are more stable with Ti than SiO2.
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- Copyright © Materials Research Society 1992
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