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Red Emitting Electroluminescent Devices Using Ga2O3 Phosphor Thin Films Prepared by Sol-Gel Process

Published online by Cambridge University Press:  21 March 2011

Tadatsugu Minami ,
Tetsuya Shirai  and
Toshihiro Miyata
Tadatsugu Minami
Affiliation:
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa, 921-8501, JAPAN
Tetsuya Shirai
Affiliation:
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa, 921-8501, JAPAN
Toshihiro Miyata
Affiliation:
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa, 921-8501, JAPAN
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Abstract

High-luminance red-emitting thin-film electroluminescent (TFEL) devices have been developed using Ga2O3 phosphor thin films prepared by a sol-gel deposition method. Single-insulating-layer-type TFEL devices were fabricated by depositing a Cr- or a Eu-activated Ga2O3 phosphor thin film onto a thick BaTiO3 ceramic sheet insulator. The Ga2O3:Cr or Ga2O3:Eu thin-film emitting layer was prepared by a sol-gel process using gallium acethylacetonate (Ga(C5H7O2)3) as the Ga source with Cr(C5H7O2)3 or EuC13 as the dopant source, respectively. A high red luminance of 622 cd/m2 was obtained for a Ga2O3:Cr TFEL device driven by a sinusoidal wave voltage at 1 kHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G5.3
Copyright
Copyright © Materials Research Society 2001

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References

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