Hostname: page-component-5c6d5d7d68-tdptf Total loading time: 0 Render date: 2024-08-24T01:59:13.631Z Has data issue: false hasContentIssue false
  • English
  • Français

The Redistribution of Impurities Under RTP for Polysilicon Capped Silicon

Published online by Cambridge University Press:  28 February 2011

R. S. Hockett
R. S. Hockett*
Affiliation:
Monsanto Electronic Materials Company501 Pearl Drive, P.O. Box 8 St. Peters, MO 63376
Get access

Abstract

Rapid Thermal Processing is being evaluated in the IC industry as a way to meet the thermal budget requirements of reduced scaling in high performance Si IC's. As scaling is reduced and alternative processing is used, the study of low level interfacial impurities is expected to become more important. An example is presented here for the redistribution of interfacial impurities under RTP for polysilicon capped silicon similar to that proposed for shallow junction bipolar transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 41
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Meindel, J. D., Semiconductor Silicon 1986, edited by Huff, Howard R., Takao Abe, , and Bernd Kolbesen, (The Electrochemical Society, Pennington, NJ, 1986) ECS Vol. 86-4, p. 3 (1986).Google Scholar
2. Wilson, S. R., Semiconductor Silicon 1986, edited by Huff, Howard R., Takao Abe, , and Bernd Kolbesen, (The Electrochemical Society, Pennington, NJ, 1986) ECS Vol. 86-4, p. 621 (1986).Google Scholar
3. McLaughlin, K. L. and Taylor, M.A., Appl. Phys. Lett. 47, 992 (1985).Google Scholar
4. Schaber, H., Criegern, R.V., and Weitzel, I., J. Appl. Phys. 58, 4036 (1985).Google Scholar
5. Slusser, G., SIMS V, , Proceedings of the Fifth International Conference on Secondary Ion Mass Spectrometry, Washington, DC, September 30 -October 4, 1985, edited by Benninghoven, A., Colton, R.J., Simons, D.S., and Werner, H.W., Vol. 44 (Springer-Verlag, New York, NY, 1986) p. 331 (1986).Google Scholar