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A Relationship between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field Effect Transistors

Published online by Cambridge University Press:  10 February 2011

M. W. Dryfuse  and
M. Tabib-Azar
M. W. Dryfuse
Affiliation:
Electrical Eng. & Appl. Phys. Dept. Case Western Reserve University, Cleveland, Ohio 44106
M. Tabib-Azar
Affiliation:
Electrical Eng. & Appl. Phys. Dept. Case Western Reserve University, Cleveland, Ohio 44106
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Abstract

An explicit analytical expression relating the interface trap densities and transconductance is derived for enhancement mode field effect transistors without any simplifying assumptions regarding the energy distribution of traps. Using this relationship, the interface trap densities were calculated from transconductance data and compared to experimental data and that provided in the literature. Our expression provides a simple and convenient method to reliably estimate interface traps densities from the readily available transconductance data provided in the pertinent literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 69
Copyright
Copyright © Materials Research Society 1996

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References

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