Article contents
Reliability of Carbon Doped Base AlGaAs/GaAs HBTs as a Function of Collector Current
Published online by Cambridge University Press: 22 February 2011
Abstract
The HBTs used in this study were grown by OMVPE. The base was carbon doped to 3×1019 cm−3 and the base thickness was 500Å. Several 3μ ×10μ HBTs were biased at Ic =2,4 and 10mA (VCE=2V) and maintained at TA=125°C. Based on 1000 hours of operation at 125°C, Ic =2mA is safe, Ic =4mA is marginal and Ic =10mA is fatal.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1993
References
REFERENCES
- 2
- Cited by