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The Resolution of Photoelectrochemically Etched Features
Published online by Cambridge University Press: 21 February 2011
Abstract
The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200−μm range. The optimal conditions for etching straight grooves using laser light are determined. The application to front-to-back mask registration will be discussed.
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- Copyright © Materials Research Society 1984
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