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Selective Epitaxy of Compound Semiconductors in Movpe Growth: Growth, Modelling, and Applications

Published online by Cambridge University Press:  28 February 2011

T.F. Kuech ,
M. Goorsky ,
A. Palevsky ,
P. Solomon  and
M.A. Tischler
T.F. Kuech
Affiliation:
IBM T..J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
M. Goorsky
Affiliation:
IBM T..J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
A. Palevsky
Affiliation:
IBM T..J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
P. Solomon
Affiliation:
IBM T..J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
M.A. Tischler
Affiliation:
IBM T..J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
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Abstract

Selective cpitaxial growth during metal-organic vapor phase epitaxy (MOVPE) can be accomplished over a wide range of growth conditions through the usC of alternative growth precursors. We have used chlorine-containing growth precursors, such as diethyl gallium chloride, (C2H5)2GaCl, to selectively grow GaAs and AlxGa1x As. The growth process has been thermodynamically modelled in order to estimate relative growth rates and alloy composition. This model indicates that near the growth front the growth process is chemically similar to the inorganic-based growth of compound semiconductors. This growth technique has been applied to the growth of extremely low resistance ohmic contact structures and quantum well structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 23
Copyright
Copyright © Materials Research Society 1990

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References

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