Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-19T15:36:04.686Z Has data issue: false hasContentIssue false
  • English
  • Français

The Self Energy Approach for Calculation of Quasiparticle Energies in Materials Systems

Published online by Cambridge University Press:  28 February 2011

Mark S. Hybertsen
Mark S. Hybertsen*
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ, 07974
Get access

Abstract

A self energy approach directly taking into account the many-body nature of the electron-electron interaction is described which gives an excellent account of the quasiparticle band energies in semiconductors and insulators. The self energy approach provides a crucial link between structural models and spectroscopic probes of materials systems. Applications to bulk semiconductors, semiconductor surfaces and short period superlattices are described. A model for the screened Coulomb interaction can reduce the amount of computation required. Applicability of bulk self energy results to more complex systems, e.g. surfaces, is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 141: Symposium T – Atomic Scale Calculations in Materials Science , 1988 , 79
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]See, for example, Louie, S.G. in Electronic Structure, Dynamics and Quantum Structural Properties of Condensed Matter, edited by Devreese, J. and Camp, P. van (Plenum, New York, 1985), p. 335.Google Scholar
[2]Sham, L.J. and Schljiter, M., Phys. Rev. Lett. 51, 1888 (1983).Google Scholar
[3]Hedin, L. and Lundqvist, S., Solid State Phys. 23, 1 (1969).Google Scholar
[4]Hybertsen, M.S. and Louie, S.G., Phys. Rev. Lett. 55, 1418 (1985); Phys. Rev. B 34, 5390 (1986).Google Scholar
[5]Godby, R.W., Schliiter, M. and Sham, L.J., Phys. Rev. Lett. 56, 2415 (1986); Phys. Rev. B 35, 4170 (1987); Phys. Rev. B 37, 10159 (1988).Google Scholar
[6]Hybertsen, M.S. and Louie, S.G., Phys. Rev. Lett. 58, 1551 (1987); Phys. Rev. B 38, 4033 (1988).Google Scholar
[7]Hybertsen, M.S. and Schliiter, M., Phys. Rev. B 36, 9683 (1987).Google Scholar
[8]Zhang, S.B. et al. , Solid State Comm. 66, 585 (1988).Google Scholar
[9]Hybertsen, M.S. and Louie, S.G., Phys. Rev. B 35, 5585 (1987).Google Scholar
[10]Hybertsen, M.S. and Louie, S.G., Phys. Rev. B 37, 2733 (1988).Google Scholar
[11]Zahlenwerte und Funktionen aus Naturwissenshaften und Technik, in Vol. III of , Landolt-Bornstein (Springer, New York, 1982), pt. 17a; see also Ref. 4.Google Scholar
[12]Bringans, R. D. et al. , Phys. Rev. Lett. 55, 533 (1985); R. I. G. Uhrberg, et al., Phys. Rev. B 35, 3945 (1987); J.R. Patel, et al., Phys. Rev. 36, 7715 (1987).Google Scholar
[13]Becker, R.S. et al. , Phys. Rev. Lett. 60, 116 (1988); unpublished.Google Scholar
[14]Pearsall, T.P. et al. , Phys. Rev. Lett. 58, 729 (1987).CrossRefGoogle Scholar
[15]Hybertsen, M.S. et al. , Phys. Rev. B 37, 10195 (1988).Google Scholar