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Self-assembled InP Quantum Dot -TiO2 Solid Grätzel Solar Cell

Published online by Cambridge University Press:  01 February 2011

Tingying Zeng
Affiliation:
NanoSonic, Inc., P. O. Box 618, Christiansburg, VA 24068
Elizabeth Gladwin
Affiliation:
NanoSonic, Inc., P. O. Box 618, Christiansburg, VA 24068
Richard O. Claus
Affiliation:
NanoSonic, Inc., P. O. Box 618, Christiansburg, VA 24068 ECE and MSE Departments, Virginia Tech, Blacksburg, VA 24061
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Abstract

The processing of Solid Grätzel Solar Cells (SGSCs) offers advantages of cost effective fabrication, possible flexible products, and high incident photon-to-electron conversion efficiencies (IPCE). In this paper, InP quantum dots (QDs) were synthesized and used as the photosensitizer to design new generation SGSCs. An organic p-type charge transport material (spiro-OMeTAD) was used as the hole-transport material (HTM). The InP QD has an average diameter of approximately 3nm. Preliminary research indicates that InP QD is a promising photosensitizer, which allows the sensitized SGSC TiO2 nanocrystalline cell to achieve over 400mV open circuit photovoltage, and a short-circuit current greater than 0.035mA/cm2 under the illumination of a solar simulator with an integrated light power of 58mW/cm2.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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