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Shallow Junction Formation in As-Implanted Si by Low-Temperature Rapid Thermal Annealing

Published online by Cambridge University Press:  21 February 2011

M. K. El-Ghor ,
S. J. Pennycook  and
R. A. Zuhr
M. K. El-Ghor
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6057
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6057
R. A. Zuhr
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6057
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Abstract

Shallow junctions were formed in single-crystal Si(100) by implantation of As at energies between 2 and 17.5 keV followed by conventional furnace annealing or by rapid thermal annealing (RTA). Cross-sectional transmission electron microscopy (XTEM) showed that defect-free shallow junctions could be formed at temperatures as low as 700 °C by RTA, with about 60% dopant activation. From a comparison of short-time and long-time annealing, it is proposed that surface image forces are responsible for the efficient removal of end-of-range (EOR) dislocation loops

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 19
Copyright
Copyright © Materials Research Society 1989

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