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SiC and GaN High-Voltage Power Devices

Published online by Cambridge University Press:  15 March 2011

T.P. Chow
T.P. Chow*
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180-3590, chowt@rpi.edu
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Abstract

The present status of development of SiC and GaN devices for high-voltage power electronics applications is reviewed. Device structures that are particularly applicable to these two wide bandgap semiconductors are considered and compared to those commonly used in silicon. The simulated and experimental performance of two-terminal rectifiers and three- terminal transistors and thyristors are compared. The effects of material parameters (mobility, ionization coefficients, lifetimes) and defects on device characteristics are pointed out. Similarities and differences between electronic and photonic device development in these semiconductors are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T1.1.1
Copyright
Copyright © Materials Research Society 2000

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References

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