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Silicon-Oxynitride (SiON) for Photonic Integrated Circuits

Published online by Cambridge University Press:  10 February 2011

H. W. M. Salemink ,
F. Horst ,
R. Germann ,
B. J. Offrein  and
G. L. Bona
H. W. M. Salemink
Affiliation:
IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
F. Horst
Affiliation:
IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
R. Germann
Affiliation:
IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
B. J. Offrein
Affiliation:
IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
G. L. Bona
Affiliation:
IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
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Abstract

We report on the fabrication and analysis of silicon-oxynitride (SiON) as core material for silicon-based planar photonic waveguide circuits. Features of devices made of this particular SiON material are: (1) a silicon-compatible technology (low-cost perspective), (2) a waveguide structure with high dielectric index contrast, allowing a very compact device layout (approximately 10× smaller radius of curvature than conventional doped SiO2 technology), (3) a low optical loss < 0.15 dB/cm, in the 1550 nm telecommunication window and (4) a negligible polarization dependence. The materials aspects and resulting analyses of the SiON layers as well as particular device properties are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 255
Copyright
Copyright © Materials Research Society 1999

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References

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