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Simulation of a Simplified Design for a Nanoscale Metal-Oxide Field Effect Transistor

Published online by Cambridge University Press:  10 February 2011

D. M. Newns ,
W. M. Donath  and
P.C. Pattnaik
D. M. Newns
Affiliation:
IBM T. J. Watson Research Center, P.O.B. 218 Yorktown Heights, NY 10598
W. M. Donath
Affiliation:
IBM T. J. Watson Research Center, P.O.B. 218 Yorktown Heights, NY 10598
P.C. Pattnaik
Affiliation:
IBM T. J. Watson Research Center, P.O.B. 218 Yorktown Heights, NY 10598
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Abstract

We describe simulations on a simplified design for a metal-oxide nanoscale Field Effect Transistor (FET). The device features an oxide channel with a high dielectric constant ferroelectric as the gate insulator. In the present model, the gate and source/drain electrodes are unconventionally placed on opposite sides of the channel. Simulations are quantum mechanical and are based on a simplified transport model. Results on a 10 nm. channel device show adequate conductance and ON/OFF ratio, while simulation of a ring oscillator yields an estimated device switching time of 300 fs..

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 11
Copyright
Copyright © Materials Research Society 2000

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