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Simulation of Mechanisms in Strained Silicon Germanium Epitaxy
Published online by Cambridge University Press: 17 March 2011
Abstract
Growth of strained semiconductors can lead to self-assembly of interesting structures such as quantum dots. Simulation of this growth requires an accurate and efficient model for the interactions of lattice mismatched materials. We present a potential for calculating the bond energies in a diamond-like crystal of silicon and germanium. With this potential we predict the strain profiles in an embedded quantum dot and discuss the mechanisms of island formation.
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- Copyright © Materials Research Society 2002