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Simulation of Temperature Effects during Rapid Thermal Processing

Published online by Cambridge University Press:  25 February 2011

R. Kakoschek  and
E. BuβMann
R. Kakoschek
Affiliation:
Siemens AG. HL T 312, Otto-Hahn-Ring 6, D-8000 MHnche83n, FRG
E. BuβMann
Affiliation:
Siemens AG. HL T 312, Otto-Hahn-Ring 6, D-8000 MHnche83n, FRG
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Abstract

A complete theory of wafer heating during rapid thermal processing (RTP) is presented. Excellent agreement with experimental results of two commercial RTP systems is obtained. The temperature uniformity is limited by radiation loss at the wafer edge in the stationary state and by nonuniform illumination of the wafer during ramp-up. Structures on wafers are also potential sources for nonuniform heating. Considerable dynamic temperature inhomogeneities during rap-up might limitfu ture applications of RTPe specially when wafer sizes become larger. Possible improvements are suggested regarding adequate process cycling, chip and equipment design.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 473
Copyright
Copyright © Materials Research Society 1989

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References

LITERATURE

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