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Simulation of the Nucleation and Growth of Si Grains Inside Au Thin Films
Published online by Cambridge University Press: 15 February 2011
Abstract
The Si crystallization process induced by the presence of a gold thin film was computer simulated using a random resistor network and concepts of the percolation theory. The model considers initially a pure Au resistor network. The random appearance of Si nuclei corresponds to a high local variation of the resistance value. The crystallization process was simulated step-by-step and parameters as nucleation rate and growth rate were tested. Considering an interface limited reaction process, the simulated results are in good agreement with experimentally obtained in-situ electrical measurements and scanning electron microscopy micrographies.
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- Copyright © Materials Research Society 1995