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Simulation of the Steady-State Photocarrier Grating Method Applied to Amorphous Materials
Published online by Cambridge University Press: 21 February 2011
Abstract
General features of the steady-state photocarrier grating technique applied to amorphous semiconductors are investigated by complete numerical simulation. The results are interpreted with an analytical model which delivers a closed-form expression for β(A,E) assuming dominance of one carrier type. The variation of the electric field E instead of the grating period A is suggested as an easier and more accurate tool for the experimental technique.
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- Research Article
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- Copyright © Materials Research Society 1992
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