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Simulations of an Interface Crack Nucleation During Nanoindentaion : Molecular Dynamics and Finite Element Coupling Approach
Published online by Cambridge University Press: 01 February 2011
Abstract
We carried out the nanoindentation simulations for the Ru (superlayer) / Cu (film) / SiO2 (substrate) system using the finite temperature MD-FEM coupling method. The calculations are performed for the different adhesion energies of Cu/SiO2 ranging from 0.2 to 0.6 J/m2. During loading, it was found that the interfacial crack nucleation occurs at three to four times the contact radius, driven by the tensile stress acted on the Cu/SiO2 interface. We also show that the asymmetric defect behavior have a great effect on giving birth to the crack nucleation. The observation of our simulation indicates that the mechanism of the crack nucleation strongly depends on the interfacial bonding energy.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1086: Symposium U – Mechanics of Nanoscale Materials , 2008 , 1086-U08-29
- Copyright
- Copyright © Materials Research Society 2008
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