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Single Crystal NiSi2/Si Interfaces: Fabrication, Structures, and Schottky Barrier Heights
Published online by Cambridge University Press: 25 February 2011
Abstract
Growths of single crystal NiSi2 on Si(lll), (100) and (110) are described. The atomic structures at these interfaces have also been studied and found to influence the observed Schottky barrier height significantly.
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- Copyright © Materials Research Society 1991
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