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SOLID PHASE EPITAXIAL GROWTH OF Ge ON GaAs
Published online by Cambridge University Press: 28 February 2011
Abstract
Solid phase epitaxial growth of electron beam evaporated Ge layers on unheated GaAs has been demonstrated. The amorphous Ge layers grow epitaxially on the GaAs surface during anneals at 400°C. A technique for growing these epitaxial layers without the need for in-situ heat treatment of the GaAs prior to Ge deposition is described.
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- Copyright © Materials Research Society 1986
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