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Solubility of Impurities and Defect Impurity Interaction In II-VI Semiconductors
Published online by Cambridge University Press: 21 February 2011
Abstract
A description of incorporation and solubility limit of substitutional impurities is made using the alloy CdxHgloxTe as a model of analysis and a source of experimental data.
Then non-equilibrium incorporation of impurities under light excitation is considered. A model of photo assisted doping is presented which accounts for the high doping efficiency reported for the donor indium in photoassisted grown CdTe.
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- Copyright © Materials Research Society 1990
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