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Source-drain Engineering for Channel-limited PMOS Device Performance: Advances in Understanding of Amorphization-Based Implant Techniques

Published online by Cambridge University Press:  01 February 2011

Nick E. Cowern
Nick E. Cowern*
Affiliation:
nick.cowern@ncl.ac.uk, University of Newcastle upon Tyne, School of Electrical, Electronic and Computer Engineering, Merz Court, Newcastle upon Tyne, NE1 7RU, United Kingdom, +441912225636
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Abstract

This paper discusses the role of amorphisation and residual end-of-range defects in p-channel source/drain engineering. A comparison between preamorphisation and molecular implant approaches shows up some important common features of electrical activation, diffusion, and junction leakage, related to the formation and location of boron-interstitial and self-interstitial clusters. The success of these techniques depends on confining ‘end-of-range’ defects – whether TEM-visible defects or sub-microscopic clusters – within the narrow region between the boron implant peak and the source-drain/halo depletion region. This observation points to significant improvements that can still be made in implantation processing for ultrashallow junctions.

Keywords

laser annealingion-implantationamorphous
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E04-01
Copyright
Copyright © Materials Research Society 2008

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References

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