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Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model

Published online by Cambridge University Press:  01 February 2011

George Chen  and
Su Han Loi
George Chen
Affiliation:
gc@ecs.soton.ac.uk, University of Southampton, Electronics & Computer Science, University Road, Highfield, Southampton, Hampshire, SO17 1BJ, United Kingdom, +44 (0)2380 595166
Su Han Loi
Affiliation:
shl202@ecs.soton.ac.uk
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Abstract

Present study aims to develop a clear insight on factors that influence space charge dynamics in solid dielectrics through a numerical simulation. The model used for the simulation is proposed by Alison and Hill [1] which describes charge dynamics as a result of bipolar transport with single level trapping. In this model, a constant mobility and no detrapping have been assumed. The simulation results show that carrier mobility, trapping coefficient and Schottky barrier have a significant effect on the space charge dynamics. Many features of space charge profiles observed by experiments have been revealed in despite of over simplistic model. More importantly, the simulation allows us to study the role of each individual parameter in the formation of space charge in solid dielectrics, so that the experimental results can be better understood.

Keywords

electrical propertiesdielectricpolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 889: Symposium W – Electroresponsive Polymers and Their Applications , 2005 , 0889-W08-06
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Alison, J. M. and Hill, R. M. J. Phys. D: Appl. Phys. 27 1291–9 (1994).Google Scholar
2. Lampert, M. A. and Mark, P., “Current injections in solids”, (NY, London, 1970).Google Scholar
3. Mott, N. F. and Davis, E. A., “Electronic processes in non-crystalline materials”, (Clarendon Press, Oxford, 2nd Ed, 1978).Google Scholar
4. Fukuma, M., Nagao, M. and Kosaki, M. Proc. 4th Int. Conf.on Properties and Applications of Dielectric Materials (Brisbane) 24–7 (1994)Google Scholar
5. Kaneko, K., Suzuoki, Y. and Mizutani, T., IEEE Trans.Dielctr. Electr. Insul. 6 152–8 (1999).Google Scholar
6. Le Roy, S., Segur, P., Teyssedre, G. and Laurant, C., J. Phys. D: Appl. Phys. 37 298–305 (2004).Google Scholar
7. Kao, K. C., Hwang, W., “Electrical Transport in Solids”, (Pergamon Press, 1981).Google Scholar
8. Maeno, T., Futami, T., Kushibe, H., Takada, T. and Cooke, C., IEEE Trans. Electr. Insul. 23, 433–439, (1988).Google Scholar