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Spatial and Temporal Characteristics of the Semiconductor to Metallic Phase Transition in VO2 Thin Films

Published online by Cambridge University Press:  03 September 2012

Mark Corbett ,
Keith L Lewis  and
Andrew M Pitt
Mark Corbett
Affiliation:
Defence Research Agency St Andrews Road, Malvern, WR14 3PS, UK
Keith L Lewis
Affiliation:
Defence Research Agency St Andrews Road, Malvern, WR14 3PS, UK
Andrew M Pitt
Affiliation:
Defence Research Agency St Andrews Road, Malvern, WR14 3PS, UK
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Abstract

Vanadium dioxide exhibits a semiconductor to metallic phase transition at a temperature of about 68 °C. This can be exploited in the form of optical thin film structures which will exhibit non-linear behaviour when exposed to pulsed infra-red radiation. Since the phase transition is structural in nature, it is of interest to explore the temporal and spatial properties when irradiated with pulsed laser sources. Fast CMT detectors have been used to resolve nanosecond temporal detail on an experimental basis and the spatial charateristics have been explored using a simple adiabatic heating model. The dynamic transmission values measured for VO2 devices are complex combinations of the temporally and spatially varying characteristics of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 479: Symposium S – Materials for Optical Limiting II , 1997 , 153
Copyright
Copyright © Materials Research Society 1997

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