Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-19T10:38:51.434Z Has data issue: false hasContentIssue false
  • English
  • Français

STM Study of Self-assembly of Quantum Dot Formed by Selective Laser Heating

Published online by Cambridge University Press:  18 March 2013

Haeyeon Yang  and
Casey M. Clegg
Haeyeon Yang
Affiliation:
Nanoscience and Nanoengineering Department, South Dakota School of Mines and Technology, Rapid City, SD 57701-3995, USA
Casey M. Clegg
Affiliation:
Nanoscience and Nanoengineering Department, South Dakota School of Mines and Technology, Rapid City, SD 57701-3995, USA
Get access

Abstract

Scanning Tunneling Microscope (STM) was used to examine the morphologies of selfassembled InGaAs quantum dots (QDs). In order to induce the self-assembly, unlike the conventional Stranski-Krastanov (S-K) growth method, spatial thermal modulations in nanoscale were created in-situ on strained-but-flat InGaAs surfaces in a Molecular Beam Epitaxy (MBE) growth reactor by applying interferential irradiations of laser pulses (IILP). As-irradiated surfaces were examined using an attached ultra-high vacuum (UHV) STM. STM images indicate that the irradiation of 7 nano second laser pulse induces self-assembly of QDs. The average size of laser-induced QDs is smaller while their density is larger than that of QDs formed by annealing strained but flat epilayers conventionally. Furthermore, the dot density is modulated sinusoidally with a periodicity commensurate with that of the interference, which suggests that the placement of QDs can be controlled on the scale of the optical wavelength used. QD volume analysis suggests that dots grow faster laterally than vertically so that dots become flattened as they get larger.

Keywords

laser annealingmolecular beam epitaxy (MBE)scanning tunneling microscopy (STM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1527: Symposium UU – Scanning Probe Microscopy―Frontiers in Nanotechnology , 2013 , mrsf12-1527-uu06-18
Copyright
Copyright © Materials Research Society 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Snyder, C. W., Orr, B. G., Kessler, D., Sander, L. M., Physical Review Letters 66, 3032 (06/10/, 1991).CrossRefGoogle Scholar
Xu, M. C., Temko, Y., Suzuki, T., Jacobi, K., Surface Science 580, 30 (4/10/, 2005).CrossRefGoogle Scholar
Richardella, A. et al. ., Science 327, 665 (February 5, 2010, 2010).CrossRefGoogle Scholar
Kim, D. J., Yang, H., Nanotechnology 19, 475601 (2008).CrossRefGoogle Scholar
Kim, D. J., Everett, E. A., Yang, H., Journal of Applied Physics 101, 106106 (2007).CrossRefGoogle Scholar
(Our preliminary photoluminescence data indicate confinement effects similar to those from InGaAs quantum dots.).Google Scholar
Xie, Q., Madhukar, A., Chen, P., Kobayashi, N. P., Physical Review Letters 75, 2542 (1995).CrossRefGoogle Scholar
Favazza, C., Trice, J., Kalyanaraman, R., Sureshkumar, R., Applied Physics Letters 91, 043105 (2007).CrossRefGoogle Scholar
Favazza, C., Trice, J., Krishna, H., Kalyanaraman, R., in Materials Research Society. (MRS, Boston, 2005), vol. 890, pp. Y04–06.Google Scholar
Kelly, M. K. et al. ., Applied Physics Letters 69, 1749 (1996).CrossRefGoogle Scholar
Long, J. P., Goldenberg, S. S., Kabler, M. N., Physical Review Letters 68, 1014 (1992).CrossRefGoogle Scholar
Kim, D. J., Cha, D., Salamo, G. J., Yang, H., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, 2776 (2006).CrossRefGoogle Scholar
Burgess, D. J., S. P. C., W. E., J. Vac. Sci. Technol. A 4, 1362 (1986).CrossRefGoogle Scholar
Penev, E., Stojkovi, S., Kratzer, P., Scheffler, M., Phys. Rev. B. 69, 115335 (2004).CrossRefGoogle Scholar
Aspnes, D. E., Studna, A. A., Physical Review B 27, 985 (1983).CrossRefGoogle Scholar
Guimard, D. et al. ., Applied Physics Letters 96, 203507 (2010).CrossRefGoogle Scholar
Zhou, D., Sharma, G., Thomassen, S. F., Reenaas, T. W., Fimland, B. O., Applied Physics Letters 96, 061913 (2010).CrossRefGoogle Scholar