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Strain Relief Mechanisms and Nature of Misfit Dislocations in GaAs/Si Heterostructures
Published online by Cambridge University Press: 22 February 2011
Abstract
The nucleation and glide of misfit dislocations in GaAs/Si system is investigated using transmission electron microscopy. GaAs epilayers of different thicknesses were examined by electron microscopy (plan and cross-section) and the elastic strain remaining in the film has been related to the average spacing of the misfit dislocations at the interface. A model is developed based on minimum energy considerations to determine the strain-thickness relationship. The theoretical predictions of strain relaxation are compared with experimental observations using high resolution electron microscopy.
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- Copyright © Materials Research Society 1989
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