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Structural Analysis of Pulsed Laser Deposited FeSi2 Films

Published online by Cambridge University Press:  03 September 2012

O.P. Karpenko ,
C.H. Olk ,
G.L. Doll ,
J.F. Mansfield  and
S.M. Yalisove
O.P. Karpenko
Affiliation:
University of Michigan, Department of Materials Science and Engineering, 2300 Hayward Street, Ann Arbor, MI, 48109-2136
C.H. Olk
Affiliation:
University of Michigan, Department of Materials Science and Engineering, 2300 Hayward Street, Ann Arbor, MI, 48109-2136
G.L. Doll
Affiliation:
North American Operations Research and Development Center, General Motors Corporation, Warren, MI
J.F. Mansfield
Affiliation:
University of Michigan, Department of Materials Science and Engineering, 2300 Hayward Street, Ann Arbor, MI, 48109-2136
S.M. Yalisove
Affiliation:
North American Operations Research and Development Center, General Motors Corporation, Warren, MI
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Abstract

This study focuses on the characterization of iron silicide grown, for the first time, by pulsed laser deposition on Si(111). Silicide growth was attempted both by deposition of pure Fe followed by annealing, and congruent deposition of Fe and Si from a stoichiometric FeSi2 target. The films formed by deposition of pure Fe and annealing did not grow epitaxially on Si(111) and contained a number of phases including β-FeSi2. Films grown by congruent deposition of Fe and Si did grow epitaxially on Si(111) and contained either pure β-FeSi2 or a mixture of both FeSi and β-FeSi2, depending on deposition conditions. The following epitaxial orientations were observed: β-FeSi2(001)//Si(111), β-FeSi2[010]//Si<110> with three variants, and FeSi(111)//Si(111), FeSi[110]//Sit[112^. Films of various thicknesses were analyzed with conventional transmission electron diffraction and microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 103
Copyright
Copyright © Materials Research Society 1994

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References

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