Hostname: page-component-7bb8b95d7b-pwrkn Total loading time: 0 Render date: 2024-09-18T05:49:19.921Z Has data issue: false hasContentIssue false

Structural and Dielectric Properties of Pulsed Laser Deposited Pb[Yb1/2Nb1/2]O3-PbTiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

Véronique Bornand
Affiliation:
current address: Laboratoire de Physicochimie de la Matière Condensée UMR 5617, C.C. 003, Place Eugène Bataillon, 34095 MONTPELLIER Cédex 5, France
Susan Trolier-McKinstry
Affiliation:
The Pennsylvania State University, Department of Materials Science and Engineering, Materials Research Laboratory, University Park, PA 16802-4801
Get access

Abstract

Heterostructures consisting of (001) LaAlO3 or (111) SrTiO3 substrates, SrRuO3 metallic oxide bottom electrodes and Pb[Yb1/2Nb1/2]O3-PbTiO3 ferroelectric films were deposited by pulsed laser deposition. The combination of oxidic perovskite-type materials results in highly <001>- or <111>-heteroepitaxial capacitors with well-defined and homogeneous columnar microstructures. Most of the films show room temperature dielectric constant greater than 1500 associated with low dielectric loss (tgδ < 4%) and exhibit saturated hysteresis loops with remanent polarizations up to Pr ∼ 50µC.cm−2. It was found that the ferroelectric characteristics and, in particular, the fatigue phenomena greatly depend on the orientation and crystalline quality of the as-grown films. The stabilization of the <001>-orientation enhances the fatigue resistance and a good endurance up to 1011 cycles has been determined for highly <001>-textured samples. In contrast, fatigue tests performed on strongly <111>-oriented capacitors have revealed poor fatigue performances, with a progressive decrease in the switchable polarization by ac voltage cycling.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Scott, J.F. and Araujo, C.A. Paz de, Science 246, 1400 (1989)10.1126/science.246.4936.1400Google Scholar
2. Ramesh, R., Thin Film Ferroelectric Materials and Devices (Kluwer Academic Publisher, 1997)10.1007/978-1-4615-6185-9Google Scholar
3. Cross, L.E., Ferroelectrics 76, 241 (1987)10.1080/00150198708016945Google Scholar
4. Shrout, T.R. and Fielding, J., Proc. of the 1990 IEEE Ultrasonics Symp. 7115 (1990)Google Scholar
5. Yamashita, Y. and Ichinose, N., Proc. of the 10th IEEE Int. Symp. Appl. Ferr. 1, 71 (1996)Google Scholar
6. Park, S.E. and Shrout, T.R., Presentation at the 1997 Williamsburg Workshop on Ferroelectrics (1997)Google Scholar
7. Yamamoto, T. and Ohashi, S, Jpn J. Appl. Phys. 34, 5349 (1995)10.1143/JJAP.34.5349Google Scholar
8. Lim, H., Lim, H.J. and Choo, W.K., Jpn J. Appl. Phys. 34, 5449 (1995)10.1143/JJAP.34.5449Google Scholar
9. Maria, J.P., Trolier-McKinstry, S., Schlom, D.G., Hawley, M.E. and Brown, G.W., J. Appl. Phys. 83, 4373 (1998)10.1063/1.367195Google Scholar
10. Bornand, V. and Trolier-McKinstry, S., submitted to Thin Solid FilmsGoogle Scholar
11. Bornand, V. and Trolier-McKinstry, S., submitted to J. Appl. Phys.Google Scholar
12. Park, Y., Knowles, K.M. and Cho, K., J. Appl. Phys. 83, 5702 (1998)10.1063/1.367424Google Scholar
13. Xu, F., PhD Thesis, The Pennsylvania State University (1999)Google Scholar
14. Maria, J.P., Hackenberger, W. and Trolier-McKinstry, S., J. Appl. Phys. 84, 5147 (1998)10.1063/1.368809Google Scholar
15. Yoo, I.K. and Desu, S.D., Mat. Sci. Eng. B 13, 319 (1992)10.1016/0921-5107(92)90135-VGoogle Scholar
16. Warren, W.L., Dimos, D., Tuttle, B.A. and Smyth, D.M., J. Am. Ceram. Soc. 77, 2753 )1994)10.1111/j.1151-2916.1994.tb04672.xGoogle Scholar
17. Bornand, V. and Trolier-McKinstry, S., submitted to J. Mat. Res.Google Scholar
18. Takemura, K., Ozgul, M., Bornand, V., Trolier-McKinstry, S. and Randall, C.A., Proc. 9th US-Japan Workshop on Dielectric and Piezoelectric Materials, Okinawa, Nov.3th-5th (1999)Google Scholar