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Studies of PQ-100(TM) Polyquinoline Film for Multichip Module(MCM) Applications

Published online by Cambridge University Press:  15 February 2011

Kyung W. Paik ,
Herbert S. Cole  and
Neil H. Hendricks
Kyung W. Paik
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY 12301
Herbert S. Cole
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY 12301
Neil H. Hendricks
Affiliation:
Maxdem Inc., San Dimas, CA 91773
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Abstract

Oxygen and O2+CF4 RIE showed faster etch rate of PQ-100 film than nonoxygen containing RIE, and caused rough surface morphology. Ti shows good adhesion to the PQ-100 film because of Ti-O and possible Ti-N compound formation at the interface. No diffusion of Ti and Ti-containing precipitates were observed at the Ti/PQ interface even at temperatures of 250 °C. In contrast to the Ti/PQ interface, Cu showed very poor adhesion to the PQ film because of weak chemical bonding. Cu reaction compounds were not observed at the interface at the 250 °C annealing. Ti adhesion to the PQ-100 film was good for control, RIE modified, and water-boiled cases. Initial studies suggest a reduction in peel strength at 250 °C annealing, although this topic must be further addressed to understand the exact mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 264: Symposium G – Electronic Packaging Materials Science VI , 1992 , 161
Copyright
Copyright © Materials Research Society 1992

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References

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