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Studies of Silicon Oxynitride Films Produced by Radio-Frequency Plasma Assisted Electron Cyclotron Resonance

Published online by Cambridge University Press:  17 March 2011

J.D. Brewer ,
A. Raveh  and
E.A. Irene
J.D. Brewer
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3290
A. Raveh
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3290
E.A. Irene
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3290
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Abstract

Single crystal silicon wafers were treated by direct oxynitridation using electron cyclotron resonance (ECR) and radio-frequency (rf) plasma with separate N2 and O2 gas sources. Fabricated layers were characterized by ex situ spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES), and atomic force microscopy (AFM).

The thickness and nitride/oxide ratio of silicon oxynitride layers were found to be dependent on the main process variables, namely gas pressure, bias voltage, and N2/O2 flow rate ratio. It was also observed that ECR/rf plasma is more efficient for the formation of layers with higher nitrogen content at relatively low pressure (≤ 200 mTorr) and bias voltage (−40 V) when compared to that of rf plasma alone. SE modeling provided good fitting to experimental data, while AES and AFM analyses supported SE results. The effects of fabrication conditions on the thickness and composition of the layers will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P6.2
Copyright
Copyright © Materials Research Society 2001

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