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Study of annealed Indium Tin Oxide Films Prepared by RF Reactive Magnetron Sputtering

Published online by Cambridge University Press:  21 February 2011

Li-Jian Meng ,
A. Maçarico  and
R. Martins
Li-Jian Meng
Affiliation:
CEMOP/UNINOVA, Quinta de Torre, 2825 Monte da Caparica, Portugal
A. Maçarico
Affiliation:
CEMOP/UNINOVA, Quinta de Torre, 2825 Monte da Caparica, Portugal
R. Martins
Affiliation:
CEMOP/UNINOVA, Quinta de Torre, 2825 Monte da Caparica, Portugal
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Abstract

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). the post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. the resistivity of as-deposited film is about 1.3 х 10-1 Ω*cm and decreases down to 6.9 х 10-3Ω*cm as the annealing temperature is increased up to 500 °C. IN addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 379
Copyright
Copyright © Materials Research Society 1995

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References

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