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A Study of the State Distribution in Various a-Si:H Materials by a New Capacitance Method
Published online by Cambridge University Press: 26 February 2011
Abstract
A new method for the determination of the deep states density in amorphous semiconductors is presented. The method is based on the carriersemission- time dependence of the capacitance-voltage characteristics of Schottky barriers. The applicability of the method for the study of hydrogenated amorphous silicon materials is demonstrated. The pitfalls associated with trying to deduce the density of states from a single capacitance-voltage characteristic are also discussed.
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- Copyright © Materials Research Society 1987
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