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Sub-Micron Contact Filling and Electromigration of Selfion-Enhanced Physical Vapor Deposited Aluminum Films
Published online by Cambridge University Press: 15 February 2011
Abstract
The electromigration resistance, the sub-micron contact area filling capability, the crystal structure, the preferred orientation, and the CMOS device characteristics of self-ion-enhanced physical vapor deposited aluminum metallizations have been studied. It has been found that optimal conditions can be achieved by increasing the deposition rate and by applying some ionization and acceleration of the aluminum particles.
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- Copyright © Materials Research Society 1991
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