Hostname: page-component-788cddb947-t9bwh Total loading time: 0 Render date: 2024-10-19T20:24:32.440Z Has data issue: false hasContentIssue false
  • English
  • Français

Substrate Step Induced Strain in Heteroepitaxial Growth

Published online by Cambridge University Press:  22 February 2011

W. R. L. Lambrecht ,
B. Segall  and
P. Pirouz
W. R. L. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106
B. Segall
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
Get access

Abstract

During epitaxial growth of lattice-mismatched materials, substrate surface steps induce vertical misfit between substrate and epilayer. It is shown that the resulting strain is accomodated by an interface dislocation, which is of the Read-Shockley type for a complete step and supplemetary displacement type for a demistep, using R.C. Pond's classification. Alternative models for the strain accomodation are considered. A localized “displacement boundary” is shown to be unfavorable irrespective of the film-thickness. Residual shear strain in the film requires debonding from the substrate, which is shown to be unfavorable with respect to the dislocation model. The distribution of strain between film and substrate is shown to depend weakly on film-thickness but strongly on the material's elastic constants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 199
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Aspnes, D. E. and Ihm, J., Phys. Rev. Lett. 57, 3054 (1987)10.1103/PhysRevLett.57.3054Google Scholar
[2] Nakayama, T., Tanashiro, Y., and Takayanagi, K., Jpn. J. Appl. Phys. Pt. 2 26, L280 (1987)10.1143/JJAP.26.L280CrossRefGoogle Scholar
[3] Fisher, R. J., Chand, N. C., Knopp, W. F., Morcoc, H., Ericson, L. P., and Youngman, R., Appl. Phys. Lett. 47, 397 (1985)Google Scholar
[4] Sakamoto, S. and Hashiguchi, G., Jpn. J. Appl. Phys. Pt. 2 25, L78 (1986)CrossRefGoogle Scholar
[5] Chadi, D. J., Phys. Rev. Lett. 59, 1691 (1987)10.1103/PhysRevLett.59.1691CrossRefGoogle Scholar
[6] Merwe, J. H. van der, Phys. Rev. B 37, 2892 (1988); S.-Afr. Tydskr. Fis. 9, 55 (1986); J. H. van der Merwe and H. Kunert, Phys. Rev. B 37, 2902 (1988)Google Scholar
[7] Pirouz, P., Chorey, C. M., and Powell, J. A., Appl. Phys. Lett. 50, 221 (1987)10.1063/1.97667Google Scholar
[8] Lambrecht, W. R. L. and Segall, B., Mat. Res. Soc. Proc. MRS Fall Meeting 1988, Symposium Q, submittedGoogle Scholar
[9] Merwe, J. H. van der, J. Appl. Phys. 34, 123 (1962)Google Scholar
[10] Matthews, J. W. and Blakeslee, A. E., J. Crystal Growth 27, 118 (1974)Google Scholar
[11] People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985)10.1063/1.96206Google Scholar
[12] Dodson, B. W. and Tsao, J. Y., Appl. Phys. Lett. 51, 1325 (1987)10.1063/1.98667CrossRefGoogle Scholar
[13] Pond, R. C., in Dislocations and Properties of Real Materials, (London: Inst. Metals 1987), p. 71 Google Scholar
[14] Kingery, W. D., Bowen, H. K., and Uhlmann, D. R., Introduction to Ceramics, Second Edition (John Wiley, New York 1976), p. 177 Google Scholar