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Suppression of Ion-Induced Charge Collection by High-Energy B+-Implanted Layer

Published online by Cambridge University Press:  21 February 2011

T. Kishimoto ,
H. Sayama ,
M. Takai ,
Y. Ohno ,
K. Sonoda ,
T. Nishimura ,
A. Kinomura ,
Y. Horino  and
K. Fujii
T. Kishimoto
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
H. Sayama
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
M. Takai
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Y. Ohno
Affiliation:
ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
K. Sonoda
Affiliation:
ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
T. Nishimura
Affiliation:
ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
A. Kinomura
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan
Y. Horino
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan
K. Fujii
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan
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Abstract

Control of charge carrier collection by high-energy boron-implanted layers has been investigated to clarify the validity of buried well structures against soft errors in dynamic random-access memories (DRAMs) by ion-induced-current measurements using high-energy proton microprobes. A finely focused 1.3 MeV proton beam has been used to irradiate normal to n+p diodes with buried layers fabricated by B+ implantation at 160 — 1000 keV and to doses of 1 × 1012 — 1 × 101 ions/cm2, and reverse-biased at 1 to 5 V. The measured current was induced by carriers generated by ion microprobes. The collection of charge carriers induced by microprobe irradiation could be reduced by a buried layer formed by boron implantation. It was found that the rate of charge collection depended not on the depth but on the implantation dose of the buried layer. The carrier collection efficiency of the n+p diode with twin wells (i.e., a retrograde well) was two thirds of that with a conventional well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 135
Copyright
Copyright © Materials Research Society 1995

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