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Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

Published online by Cambridge University Press:  01 February 2011

Claudiu I. Muntele ,
Sergey Sarkisov ,
Iulia Muntele  and
Daryush Ila
Claudiu I. Muntele
Affiliation:
claudiu@cim.aamu.edu, Alabama A&M University, PO Box 1447, Normal, AL, 35762, United States
Sergey Sarkisov
Affiliation:
ssarkisov@aamu.edu
Iulia Muntele
Affiliation:
iulia@cim.aamu.edu
Daryush Ila
Affiliation:
ila@cim.aamu.edu
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Abstract

Silicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

Keywords

sensorion-implantationdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 900: Symposium O – Nanoparticles and Nanostructures in Sensors and Catalysis , 2005 , 0900-O12-15
Copyright
Copyright © Materials Research Society 2006

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References

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