Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Zhu, X.-Y.
Wolf, M.
Huett, T.
and
White, J. M.
1991.
Thermal and Photoinduced Decomposition Pathways of Arsine on GaAs(100).
MRS Proceedings,
Vol. 236,
Issue. ,
Liu, H.
Zawadzki, P. A.
and
Norris, P. E.
1991.
Atomie Layer Epitaxy ia a Rotating Disk Reactor.
MRS Proceedings,
Vol. 240,
Issue. ,
Zhu, X.-Y.
Wolf, M.
Huett, T.
Nail, J.
Banse, B. A.
Creighton, J. R.
and
White, J. M.
1992.
Thermal and photochemical decomposition pathways of AsH3 on GaAs(100): Implication for atomic layer epitaxy.
Applied Physics Letters,
Vol. 60,
Issue. 8,
p.
977.
Masi, Maurizio
Simka, Harsono
Jensen, Klavs F.
Kuech, Thomas F.
and
Potemski, Robert
1992.
Simulation of carbon doping of GaAs during MOVPE.
Journal of Crystal Growth,
Vol. 124,
Issue. 1-4,
p.
483.
Aspnes, D.E.
Bhat, R.
Caneau, C.
Colas, E.
Florez, L.T.
Gregory, S.
Harbison, J.P.
Kamiya, I.
Aspnes, D.E.
Bhat, R.
Caneau, C.
Colas, E.
Florez, L.T.
Gregory, S.
Harbison, J.P.
Kamiya, I.
Keramidas, V.G.
Koza, M.A.
Pudensi, M.A.A.
Quinn, W.E.
Schwarz, S.A.
Tamargo, M.C.
and
Tanaka, H.
1992.
Optically monitoring and controlling epitaxial growth.
Journal of Crystal Growth,
Vol. 120,
Issue. 1-4,
p.
71.
Zhu, X.-Y.
Wolf, M.
and
White, J. M.
1992.
Photochemical decomposition of AsH3 on GaAs(100).
The Journal of Chemical Physics,
Vol. 97,
Issue. 1,
p.
605.
Kamiya, Itaru
Aspnes, D. E.
Tanaka, H.
Florez, L. T.
Harbison, J. P.
and
Bhat, R.
1992.
Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition.
Physical Review Letters,
Vol. 68,
Issue. 5,
p.
627.
Yu, Ming L.
1993.
Mechanisms of atomic layer epitaxy of GaAs.
Journal of Applied Physics,
Vol. 73,
Issue. 2,
p.
716.
Windeler, Robert S.
and
Hicks, Robert F.
1993.
Examination of Gallium Arsenide Mocvd Reaction Mechanisms.
MRS Proceedings,
Vol. 312,
Issue. ,
Heitzinger, John M
White, J.M
and
Ekerdt, J.G
1994.
Mechanisms of GaAs atomic layer epitaxy: a review of progress.
Surface Science,
Vol. 299-300,
Issue. ,
p.
892.
Yu, Ming L.
and
DeLouise, Lisa A.
1994.
Surface chemistry on semiconductors studied by molecular-beam reactive scattering.
Surface Science Reports,
Vol. 19,
Issue. 7-8,
p.
285.
Sasaki, Masahiro
and
Yoshida, Seikoh
1994.
Pulsed trimethylgallium scattering from As-stabilized and Ga-stabilized surfaces.
Applied Surface Science,
Vol. 82-83,
Issue. ,
p.
269.
DRÉVILLON, B.
and
YAKOVLEV, V.
1994.
Optical Characterization of Real Surfaces and Films.
Vol. 19,
Issue. ,
p.
1.
Creighton, J.Randall
1994.
Surface stoichiometry and the role of adsorbates during GaAs atomic layer epitaxy.
Applied Surface Science,
Vol. 82-83,
Issue. ,
p.
171.
Otake, Shigeyuki
Sakamoto, Akira
Yamamoto, Masateru
and
Iwasa, Izumi
1994.
In-situ observation of Ga adsorption during TMGa exposure on GaAs(001) surfaces with various As coverages.
Applied Surface Science,
Vol. 82-83,
Issue. ,
p.
263.
Ohno, H.
Goto, S.
Nomura, Y.
Morishita, Y.
and
Katayama, Y.
1994.
Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium.
Applied Surface Science,
Vol. 82-83,
Issue. ,
p.
164.
Yablokov, Veniamin A
and
Yablokova, Nina V
1995.
Kinetics of the thermal decomposition of alkyl derivatives of Group III and V elements.
Russian Chemical Reviews,
Vol. 64,
Issue. 10,
p.
953.
Xin, Q.-S.
and
Zhu, X.-Y.
1996.
Superthermal vibrational state distribution of CD3 thermally desorbed from GaAs(100).
The Journal of Chemical Physics,
Vol. 104,
Issue. 21,
p.
8829.
Creighton, J.R
and
Baucom, K.C
1998.
Reflectance-difference spectroscopy of adsorbate-covered GaAs(100) surfaces: a combined surface science and in-situ OMVPE study.
Surface Science,
Vol. 409,
Issue. 2,
p.
372.
Arès, R.
Watkins, S. P.
Yeo, P.
Horley, G. A.
O’Brien, P.
and
Jones, A. C.
1998.
Growth mechanisms in atomic layer epitaxy of GaAs.
Journal of Applied Physics,
Vol. 83,
Issue. 6,
p.
3390.