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Surface Modification by Ion Beam Enhanced Deposition

Published online by Cambridge University Press:  25 February 2011

R. A. Kant  and
B. D. Sartwell
R. A. Kant
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., 20375
B. D. Sartwell
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., 20375
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Abstract

Copper films given multiple sequences of Ta implantation and Cu depositions were analyzed using electron microscopy, backscattering, and Auger spectroscopy. Ta retention is 92% following direct implantation, and 100% retention was achieved for the same Ta dose if sputtered Cu is replaced during implantation. Lateral migration of Ta and microroughness were observed for all cases studied. Evidence for TaC formation is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 525
Copyright
Copyright © Materials Research Society 1984

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References

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