Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-07-05T21:37:30.725Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Spectroscopic Studies of the Initial Stages of Diamond Growth on Si(100)

Published online by Cambridge University Press:  22 February 2011

Richard B. Jackman ,
Lye Hing Chua  and
John S. Foord
Richard B. Jackman
Affiliation:
Electronic and Electrical Engineering, University College, London, Torrington Place, London, WC1E 7JE, UK
Lye Hing Chua
Affiliation:
Electronic and Electrical Engineering, University College, London, Torrington Place, London, WC1E 7JE, UK
John S. Foord
Affiliation:
Physical Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QZ, UK
Get access

Abstract

The interaction of hot filament “activated” methane and hydrogen with Si(100) surfaces has been probed in situ for the first time, using Auger electron and thermal desorption spectroscopies. It is shown that hot filament activation of methane results in thechemisorption of acetylene and ethylene on Si (100). Atomic hydrogen drives a range of surface reactions within the adsorbed phases formed. In particular hydrogen abstraction is observed which results in the efficient conversion of ethylene to adsorbed acetylene, and further reactions take place between atomic hydrogen, acetylene and C1 species, resulting in the formation of C3 hydrocarbon species. The implications of this work for diamond film growth are considered, and die results are used to develop a model to describe die growth of sp3 hybridised hydrocarbon chains on the Si surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 677
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Deshpandey, CV and Bunshah, RF J. Vac. Sci. Tech., A7 (1989), 2294 Google Scholar
2. Jansen, F, Machonkin, MA and Kuhman, DE J. Vac. Sci. Tech., A8 (1990), 3785 Google Scholar
3. Ramesham, R, Roppel, T, Ellis, C, Jaworske, DA and Baugh, W J. Mat. Res., 6 (1991), 1278 Google Scholar
4. Piekarczyk, W and Yarbrough, WA J. Cryst. Growth 108 (1991), 583 Google Scholar
5. Harris, SJ Appl. Phys. Letts., 56 (1990), 2298 Google Scholar
6. Goodwin, DG Appl. Phys. Letts., 59 (1991), 277 Google Scholar
7. Chu, CJ, D'Evelyn, MP, Hauge, RH and Margrave, JL J. Mat. Res., 5 (1990), 2405 Google Scholar
8. Martin, LR and Hill, MW J. Mat. Sci. Lets., 9 (1990), 621 Google Scholar
9. Frenklach, M and Wang, H Phys. Rev., B43 (1991), 1520 Google Scholar
10. Cheng, CC, Wallace, RM, Taylor, PA, Choyke, WJ and Yates, JT J. Appl. Phys., 67 (1990), 3693 Google Scholar
11. Nishijima, M, Yoshinobu, Y, Tsuda, H and Onchi, M Surf. Sci., 192 (1987), 383 Google Scholar
12. Yoshinobu, J, Tsuda, H, Onchi, M and Nishijima, M J. Chem. Phys., 87 (1987), 7332 Google Scholar
13. Toscano, M Surf. Sci., 251 (1991), 894 Google Scholar
14. Sinniah, K, Sherman, MG, Lewis, LB, Weinberg, WH, Yates, JT and Janda, KC J. Chem. Phys. 92 (1990), 5700 Google Scholar
15. Lin, R and Masel, RI Surf. Sci. 258 (1991), 225 Google Scholar
16. Gutleben, H, Lucas, SR, Cheng, CC, Choyke, WJ and Yates, JT Surf. Sci., 257 (1991), 146 Google Scholar
17. Bozak, MJ, Choyke, WJ, Muehlhoff, L and Yates, JT J. Appl. Phys., 60 (1986), 3750 Google Scholar
18. Bozak, MJ, Choyke, WJ, Muehlhoff, L and Yates, JT Surf. Sci., 176 (1986), 547 Google Scholar
19. Redhead, PA Vacuum, 12 (1962), 203 Google Scholar
20. Hsu, WL Proc. “Diamond 1992” (Heidelberg, September 1992)Google Scholar