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Tailoring the Crystallographic Texture and Electrical Properties of Inkjet-printed Interconnects for Use in Microelectronics

Published online by Cambridge University Press:  10 August 2011

Romain Cauchois
Affiliation:
Innovation and Manufacturing Technologies Department, Gemalto, 13881 Gemenos, FRANCE Centre Microelectronique de Provence, Ecole Nationale Supérieure des Mines de Saint-Etienne, 880 avenue de Mimet 13541 Gardanne, FRANCE
Mohamed Saadaoui
Affiliation:
Centre Microelectronique de Provence, Ecole Nationale Supérieure des Mines de Saint-Etienne, 880 avenue de Mimet 13541 Gardanne, FRANCE
Karim Inal
Affiliation:
Centre Microelectronique de Provence, Ecole Nationale Supérieure des Mines de Saint-Etienne, 880 avenue de Mimet 13541 Gardanne, FRANCE
Beatrice Dubois-Bonvalot
Affiliation:
Innovation and Manufacturing Technologies Department, Gemalto, 13881 Gemenos, FRANCE
Jean-Christophe Fidalgo
Affiliation:
Innovation and Manufacturing Technologies Department, Gemalto, 13881 Gemenos, FRANCE
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Abstract

In this paper, silver nanoparticles with a mean diameter of 40 nm are studied for future applications in microelectronic devices. The enhanced diffusivity of nanoparticles is exploited to fabricate electrical interconnects at low temperature. Sintering condition has been tuned to tailor the grain size so that electrical resistivity can be lowered down to 3.4 μOhm∙cm. In this study, a {111}-textured gold thin film has been used to increase diffusion routes. The combined effects of the substrate crystalline orientation and the sintering condition have been demonstrated to have a significant impact on microstructures. In particular, a {111} fiber texture is developed above 300°C in printed silver only if the underlying film exhibits a preferential orientation. This condition appeared as essential for the efficiency of the gold wire-bonding process step. Thus, inkjet-printed interconnects show a prospective potential compared to conventional subtractive technique and offers new opportunities for low cost metallization in electronics packaging.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Kim, D. and Moon, J., Electrochem. Solid-State Lett. 8, J30 (2005).Google Scholar
2. Buffat, P. and Borel, J.-P., Phys. Rev. A 13, 2287 (1976).Google Scholar
3. Jiang, Q. and Shi, F. G., Journal of Material Science and Technology 14, 171 (1998).Google Scholar
4. Asoro, M. A., Kovar, D., Shao-Horn, Y., Allard, L. F., and Ferreira, P. J., Nanotechnology 21, 025701 (2010).Google Scholar
5. Chang, C. L., Chuang, Y. C., and Liu, C. Y., Electr. Solid-State Lett. 10, H344 (2007).Google Scholar
6. Kao, T.-H., Song, J.-M., Chen, I.-G., Dong, T.-Y., and Hwang, W.-S., Nanotechnology 18, 435708 (2007).Google Scholar
7. Mayadas, A. F. and Shatzkes, M., Phys. Rev. B 1, 1382 (1970).Google Scholar
8. Cauchois, R., Saadaoui, M., Legeleux, J., Malia, T., Dubois-Bonvalot, B., Inal, K., and Fidalgo, J.-C., 3rd IEEE Electronic System-Integration Technology Conference, AP–4 (2010).Google Scholar
9. Thompson, C. V. and Carel, R., Materials Science and Engineering B 32, 211 (1995).Google Scholar
10. Jiang, Q., Zhang, S., and Li, J., Solid State Communications 130, 581 (2004).Google Scholar