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A Tem Study of Rhodium on Gaas; Reactions and Morphology

Published online by Cambridge University Press:  26 February 2011

Stacy L Packer  and
Ronald Gronsky
Stacy L Packer
Affiliation:
Hewlett Packard, San Diego Division, 16399 W. Bernardo Dr., San Diego, CA 92127
Ronald Gronsky
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, CA 94720
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Abstract

Reaction between Rhodium films and n-type GaAs in the temperature range of 300° to 700°C has been examined using the TEM to look at the interface and phases present. The reaction between Rh and GaAs produces a layered structure of Rh/RhGa/RhAs2/GaAs based on RBS and TEM. Above 300°C, the RhGa phase has an orientation relationship of [011]RhGa // [100]GaAs. In cross-section, an interpenetrated layered structure was observed with equiaxed RhGa above columnar grains of RhAs2. Rhodium is the moving species as suggested by voids at the Rh/reacted layer interface. The interface between the reacted layer and GaAs was smooth at 450° and 20 minutes of annealing but showed 10 nm periodic penetrations when annealed at 400° for 90 minutes. Interface roughness may influence the low barrier height reported for the Rh Schottky diode annealed at 400°.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 245
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Yu, K.M., Cheung, S.K., Sands, T., Jaklevic, J.M., and Haller, E.E., J. Appl. Phys. 61, 1099 (1987).Google Scholar
2.Fontaine, C., Okumura, T., and Tu, K.N., J. Appl. Phys. 54, 1404 (1983).Google Scholar
3.Sands, T., Keramidas, V.G., Yu, A.J., Yu, K.M., Gronsky, R., and Washburn, J., J. Mater. Res.,Google Scholar
4.Sands, T., Keramidas, V.G., Yu, K.M., Washburn, J. and Krishnan, K, J. Mater. Res., submitted.Google Scholar
5.Todd, C.J., Speight, J.D., Ashwell, G.W.B. and Heckingbottom, R., ECS Extended Abstracts # 114, Spring Meeting, Toronto, 75:1, p274 (1975).Google Scholar
6.Yu, K.M., Sands, T., Jaklevic, J.M., and Haller, E.E., J. Appl. Phys., in press.Google Scholar
7.Braslau, N., J. Vac. Sci. and Technol., 19 (3), 803 (1981).Google Scholar
8.Walukiewicz, W., J. Vac. Sci and Technol., submitted 2/87.Google Scholar