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Textural Evolution of Cu Damascene Interconnects afterAnnealing

Published online by Cambridge University Press:  17 March 2011

Jae-Young Cho ,
Hyo-Jong Lee ,
Hyoungbae Kim  and
Jerzy A. Szpunar
Jae-Young Cho
Affiliation:
Department of Mining, Metals and Materials Engineering, McGill University, Montreal, Quebec, H3A 2B2, Canada
Hyo-Jong Lee
Affiliation:
School of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Korea
Hyoungbae Kim
Affiliation:
Department of Mining, Metals and Materials Engineering, McGill University, Montreal, Quebec, H3A 2B2, Canada
Jerzy A. Szpunar
Affiliation:
Department of Mining, Metals and Materials Engineering, McGill University, Montreal, Quebec, H3A 2B2, Canada
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Abstract

Textural evolution of Cu interconnects having a different line width wasinvestigated after annealing. Texture was measured on the surface of Cuinterconnects using EBSD (electron backscattered diffraction) techniquesincluding GBCD (grain boundary character distribution). To analyze arelationship between the stress distribution and textural evolution in thesamples investigated, the micro stresses were calculated for the differentline width at 200°C using FEM (finite element modeling). In thisinvestigation, it was found that the inhomogeneity of stress distribution inCu interconnects is an important factor is necessary for understandingtextural transformation after annealing. A new interpretation of texturalevolution in damascene interconnects lines after annealing is suggested,based on the state of stress and the growth mechanisms of Cuelectrodeposits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F8.9
Copyright
Copyright © Materials Research Society 2004

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References

1. Singer, P., Semicond. Int., 21, 91(1998).Google Scholar
2. Lee, K. T., Szpunar, J. A., Morawiec, A., Knorr, D. B. and Rodbell, K. P., Can. Metall. Quart., 34, 287 (1995).Google Scholar
3. Rosenberg, R., Edelstein, D.C., Hu, C.-K., and Rodbell, K.P., Annuu. Rev. Mater. Sci., 30, 229 (2000).Google Scholar
4. Lingk, C., Gross, M.E., Brown, W.L. and Drese, R., Solid State Technol., 42, 47 (1999).Google Scholar
5. Riege, S.P. and Thompson, C.V., Scripta Mater., 41, 403 (1999).Google Scholar
6. Lee, D.N. and Lee, H.J., J. Electron. Mater., 32, 1012 (2003).CrossRefGoogle Scholar
7. Josell, D., Wheeler, D., Huber, W.H. and Moffat, T.P., Phys. Rev. Lett., 87, 016102 (2001).CrossRefGoogle Scholar
8. Lingk, C., Gross, M.E. and Brown, W.L., Appl. Phys. Lett., 74, 682 (1999).Google Scholar
9. Zschech, E., Blum, W., Zienert, I. and Besser, P.R., Z. Metallkd., 92, 803 (2001).Google Scholar