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Thermal Modeling of Plastic Ic Packages

Published online by Cambridge University Press:  26 February 2011

A. Bar-Cohen  and
Devin E. Mix
A. Bar-Cohen
Affiliation:
University of Minnesota, Mechanical Engineering Dept., 111 Church St. S. E., Minneapolis, MN 55455, USA
Devin E. Mix
Affiliation:
University of Minnesota, Mechanical Engineering Dept., 111 Church St. S. E., Minneapolis, MN 55455, USA
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Abstract

The successful design of plastic integrated circuit packages for high performance VLSI chips is a crucial element in the development of costeffective packaging technology. Unfortunately, however, most common plastic encapsulating and die-bonding materials provide relatively low thermal conductivities and large thermal expansion coefficients, as well as low mechanical strengths and a limited operating temperature range. These material properties combine to produce a large number of thermally induced package failure modes. Thus, insightful material selection and detailed design, based on extensive thermal modeling/analysis, must be performed to achieve acceptable levels of component reliability.

This paper begins with a discussion of the temporal development of the temperature fields inside a plastic IC package and continues with the presentation of transient and steady-state, first-order analytical models for: the chip temperature, the temperature and gradient across the die bond, and the half-thickness encapsulant temperature. The values obtained for a typical PDIP package are discussed and compared to the results of a finite-element analysis of this package. The insights obtained from these analyses are used to develop material Figures-of-Merit that can be used in the selection of die-bond and encapsulant materials for plastic IC packages.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 67
Copyright
Copyright © Materials Research Society 1991

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